HAL300
Differential Hall Effect
Sensor IC
Edition July 15, 1998
6251-345-1DS
MICRONAS
MICRONAS
HAL300
2
Micronas
Differential Hall Effect Sensor IC
in CMOS technology
Introduction
The HAL 300 is a differential Hall switch produced in
CMOS technology. The sensor includes 2 temperature-
compensated Hall plates (2.05 mm apart) with active off-
set compensation, a differential amplifier with a Schmitt
trigger, and an open-drain output transistor (see Fig. 2).
The HAL 300 is a differential sensor which responds to
spatial differences of the magnetic field. The Hall volt-
ages at the two Hall plates, S
1
and S
2
, are amplified with
a differential amplifier. The differential signal is
compared with the actual switching level of the internal
Schmitt trigger. Accordingly, the output transistor is
switched on or off.
The sensor has a bipolar switching behavior and re-
quires positive and negative values of
B = B
S1
B
S2
for
correct operation.
The HAL 300 is an ideal sensor for applications with a ro-
tating multi-pole-ring in front of the branded side of the
package (see Fig. 4 and Fig. 5), such as ignition timing,
anti-lock brake systems, and revolution counting.
For applications in which a magnet is mounted on the
back side of the package (back-biased applications), the
HAL 320 is recommended.
The active offset compensation leads to constant mag-
netic characteristics over supply voltage and tempera-
ture.
The sensor is designed for industrial and automotive ap-
plications and operates with supply voltages from 4.5 V
to 24 V in the ambient temperature range from 40
C
up to 150
C.
The HAL 300 is available in a SMD-package (SOT-89A)
and in a leaded version (TO-92UA).
Features:
distance between Hall plates: 2.05 mm
operates from 4.5 V to 24 V supply voltage
switching offset compensation at 62 kHz
overvoltage protection
reverse-voltage protection at V
DD
-pin
short-circuit protected open-drain output by thermal
shutdown
operates with magnetic fields from DC to 10 kHz
output turns low with magnetic south pole on branded
side of package and with a higher magnetic flux densi-
ty in sensitive area S1 as in S2
on-chip temperature compensation circuitry mini-
mizes shifts of the magnetic parameters over temper-
ature and supply voltage range
the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of hystere-
sis
EMC corresponding to DIN 40839
Marking Code
Type
Temperature Range
A
E
C
HAL 300SO,
HAL 300UA
300A
300E
300C
Operating Junction Temperature Range (T
J
)
A: T
J
= 40
C to +170
C
E: T
J
= 40
C to +100
C
C: T
J
= 0
C to +100
C
The relationship between ambient temperature (T
A
) and
junction temperature (T
J
) is explained on page 11.
Hall Sensor Package Codes
Type: 300
HAL XXXPA-T
Temperature Range: A, E, or C
Package: SO for SOT-89A,
UA for TO-92UA
Type: 300
Package: TO-92UA
Temperature Range: T
J
= 40
C to +100
C
Example: HAL 300UA-E
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: "Ordering Codes for Hall
Sensors".
HAL300
3
Micronas
Solderability
Package SOT-89A: according to IEC68-2-58
Package TO-92UA: according to IEC68-2-20
OUT
GND
3
2
1
V
DD
Fig. 1: Pin configuration
Functional Description
This Hall effect sensor is a monolithic integrated circuit
with 2 Hall plates 2.05 mm apart that switches in
response to differential magnetic fields. If magnetic
fields with flux lines at right angles to the sensitive areas
are applied to the sensor, the biased Hall plates force
Hall voltages proportional to these fields. The difference
of the Hall voltages is compared with the actual thresh-
old level in the comparator. The temperature-dependent
bias increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures. If the differential
magnetic field exceeds the threshold levels, the open
drain output switches to the appropriate state. The built-
in hysteresis eliminates oscillation and provides
switching behavior of the output without oscillation.
Magnetic offset caused by mechanical stress at the Hall
plates is compensated for by using the "switching offset
compensation technique": An internal oscillator pro-
vides a two phase clock (see Fig. 3). The difference of
the Hall voltages is sampled at the end of the first phase.
At the end of the second phase, both sampled differen-
tial Hall voltages are averaged and compared with the
actual switching point. Subsequently, the open drain
output switches to the appropriate state. The amount of
time that elapses from crossing the magnetic switch lev-
el to the actual switching of the output can vary between
zero and 1/f
osc
.
Shunt protection devices clamp voltage peaks at the
Output-Pin and V
DD
-Pin together with external series
resistors. Reverse current is limited at the V
DD
-Pin by an
internal series resistor up to 15 V. No external reverse
protection diode is needed at the V
DD
-Pin for values
ranging from 0 V to 15 V.
HAL 300
Temperature
Dependent
Bias
Switch
Hysteresis
Control
Comparator
Output
V
DD
1
OUT
3
Clock
GND
2
Fig. 2: HAL 300 block diagram
Short Circuit &
Overvoltage
Protection
Reverse
Voltage &
Overvoltage
Protection
Hall Plate
S1
Hall Plate
S2
t
V
OL
V
OUT
1/f
osc
= 16
s
Fig. 3: Timing diagram
V
OH
D
B
D
B
ON
f
osc
t
t
t
f
t
I
DD
t
HAL300
4
Micronas
Outline Dimensions
Fig. 4:
Plastic Small Outline Transistor Package
(SOT-89A)
Weight approximately 0.04 g
Dimensions in mm
4.55
0.1
2.6
0.1
0.4
0.4
1.7
0.4
1.5
3.0
0.06
0.04
4
0.2
1.53
0.05
0.125
SPGS7001-6-B3/1E
top view
y
1
2
3
2
0.7
sensitive area S
1
sensitive area S
2
x
1
x
2
branded side
Dimensions of Sensitive Areas
0.08 mm x 0.17 mm
Positions of Sensitive Areas
SOT-89A
TO-92UA
x
1
= 1.025 mm
0.2 mm
x
2
= 1.025 mm
0.2 mm
x
2
x
1
= 2.05 mm
0.01 mm
y = 0.98 mm
0.2 mm
y = 1.0 mm
0.2 mm
x
1
and x
2
are referenced to the center of the package
0.55
branded side
0.36
0.8
0.3
45
y
14.0
min.
3.1
1.27
1.27
2.54
1
2
3
0.5
0.42
Fig. 5:
Plastic Transistor Single Outline Package
(TO-92UA)
Weight approximately 0.12 g
Dimensions in mm
1.5
0.05
4.06
0.1
2.03
3.05
0.1
0.48
sensitive area S
1
sensitive area S
2
SPGS7002-6-B/1E
x
1
x
2
HAL300
5
Micronas
Absolute Maximum Ratings
Symbol
Parameter
Pin No.
Min.
Max.
Unit
V
DD
Supply Voltage
1
15
28
1)
V
V
P
Test Voltage for Supply
1
24
2)
V
I
DD
Reverse Supply Current
1
50
1)
mA
I
DDZ
Supply Current through
Protection Device
1
200
3)
200
3)
mA
V
O
Output Voltage
3
0.3
28
1)
V
I
O
Continuous Output On Current
3
30
mA
I
Omax
Peak Output On Current
3
250
3)
mA
I
OZ
Output Current through
Protection Device
3
200
3)
200
3)
mA
T
S
Storage Temperature Range
65
150
C
T
J
Junction Temperature Range
40
40
150
170
4)
C
1)
as long as T
J
max
is not exceeded
2)
with a 220
series resistance at pin 1 corresponding to test circuit 1
3)
t < 2 ms
4)
t < 1000h
Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
"Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Max.
Unit
V
DD
Supply Voltage
1
4.5
24
V
I
O
Continuous Output On Current
3
20
mA
V
O
Output Voltage
3
24
V
R
v
Series Resistor
1
270
HAL300
6
Micronas
Electrical Characteristics at T
J
= 40
C to +170
C , V
DD
= 4.5 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for T
J
= 25
C and V
DD
= 12 V
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
I
DD
Supply Current
1
4.0
5.5
6.8
mA
T
J
= 25
C
I
DD
Supply Current over
Temperature Range
1
2.5
5
7.5
mA
V
DDZ
Overvoltage Protection
at Supply
1
28.5
32.5
V
I
DD
= 25 mA, T
J
= 25
C,
t = 20 ms
V
OZ
Overvoltage Protection at Output
3
28
32.5
V
I
OL
= 25 mA, T
J
= 25
C,
t = 20 ms
V
OL
Output Voltage
3
180
250
mV
V
DD
= 12 V, I
O
= 20 mA,
T
J
= 25
C
V
OL
Output Voltage over
Temperature Range
3
180
400
mV
I
O
= 20 mA
I
OH
Output Leakage Current
3
0.06
1
A
V
OH
= 4.5 V... 24 V,
D
B <
D
B
OFF
, T
J
= 25
C
I
OH
Output Leakage Current over
Temperature Range
3
0.06
10
A
V
OH
= 4.5 V... 24 V,
D
B <
D
B
OFF
, T
J
150
C
f
osc
Internal Oscillator
Chopper Frequency
42
62
75
kHz
T
J
= 25
C
f
osc
Internal Oscillator Chopper Fre-
quency over Temperature Range
36
62
78
kHz
t
en(O)
Enable Time of Output
after Setting of V
DD
3
35
s
V
DD
= 12 V,
D
B >
D
B
ON
+ 2mT or
D
B <
D
B
OFF
2mT
t
r
Output Rise Time
3
80
400
ns
V
DD
= 12 V, RL = 820
,
CL = 20 pF
t
f
Output Fall Time
3
45
400
ns
V
DD
= 12 V, RL = 820
,
CL = 20 pF
R
thJSB
case
SOT-89A
Thermal Resistance Junction to
Substrate Backside
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 7
R
thJS
case
TO-92UA
Thermal Resistance
Junction to Soldering Point
150
200
K/W
HAL300
7
Micronas
Magnetic Characteristics at T
J
= 40
C to +170
C, V
DD
= 4.5 V to 24 V
Typical Characteristics for V
DD
= 12 V
Magnetic flux density values of switching points (Condition: 10 mT < B
0
< 10 mT)
Positive flux density values refer to the magnetic south pole at the branded side ot the package.
B = B
S1
B
S2
Parameter
40
C
25
C
100
C
170
C
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
On point
B
ON
B >
B
ON
0.2
1.2
2.2
0
1.2
2.2
0.5
1.0
2.5
2.0
0.5
3.0
mT
Off point
B
OFF
B <
B
OFF
2.2
1.0
0.2
2.2
1.0
0
2.5
1.1
0.5
3.0
1.2
2.0
mT
Hysteresis
B
HYS
=
B
ON
B
OFF
1.2
2.2
3.0
1.2
2.2
3.0
1.0
2.1
3.0
0.8
1.7
3.0
mT
Offset
B
OFFSET
=
(
B
ON
+
B
OFF
)/2
1.1
0.1
1.1
1.1
0.1
1.1
1.5
0.1
1.5
2.5
0.5
2.5
mT
D
B
OFF min
D
B
ON max
D
B
HYS
Output Voltage
Fig. 6: Definition of switching points and hysteresis
0
D
B
OFF
D
B
ON
B = B
S1
B
S2
V
OH
V
OL
Fig. 7: Recommended pad size SOT-89A
Dimensions in mm
5.0
2.0
2.0
1.0
HAL300
8
Micronas
2.5
2.0
1.5
1.0
0.5
0.0
0.5
1.0
1.5
2.0
2.5
0
5
10
15
20
25
30
mT
V
DD
V
D
B
ON
D
B
OFF
T
A
= 25
C
T
A
= 40
C
T
A
= 150
C
D
B
ON
D
B
OFF
Fig. 8: Typical magnetic switch points
versus supply voltage
2.5
2.0
1.5
1.0
0.5
0.0
0.5
1.0
1.5
2.0
2.5
3
3.5
4.0
4.5
5.0
5.5
6.0
mT
V
DD
V
D
B
ON
D
B
OFF
D
B
ON
D
B
OFF
T
A
= 25
C
T
A
= 40
C
T
A
= 150
C
Fig. 9: Typical magnetic switch points
versus supply voltage
2.5
2.0
1.5
1.0
0.5
0.0
0.5
1.0
1.5
2.0
2.5
50
0
50
100
150
200
mT
T
A
C
D
B
ON
D
B
OFF
V
DD
= 4.5 V
D
B
ON
D
B
OFF
V
DD
= 12 V
V
DD
= 24 V
Fig. 10: Typical magnetic switch points
versus ambient temperature
15
10
5
0
5
10
15
20
15 10 5
0
5
10 15 20 25 30 V
mA
V
DD
I
DD
25
T
A
= 25
C
T
A
= 40
C
T
A
= 150
C
Fig. 11: Typical supply current
versus supply voltage
HAL300
9
Micronas
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
8 V
mA
V
DD
I
DD
T
A
= 40
C
T
A
= 25
C
T
A
= 150
C
Fig. 12: Typical supply current
versus supply voltage
0
1
2
3
4
5
6
7
50
0
50
100
150
200
C
mA
T
A
I
DD
V
DD
= 24 V
V
DD
= 12 V
V
DD
= 4.5 V
Fig. 13: Typical supply current
versus ambient temperature
0
100
200
300
400
500
0
5
10
15
20
25
30 V
mV
V
DD
V
OL
T
A
= 150
C
T
A
= 25
C
T
A
= 40
C
Fig. 14: Typical output low voltage
versus supply voltage
I
O
= 20 mA
0
100
200
300
400
500
50
0
50
100
150
200
C
mV
T
A
V
OL
V
DD
= 24 V
V
DD
= 4.5 V
Fig. 15: Typical output low voltage
versus ambient temperature
I
O
= 20 mA
HAL300
10
Micronas
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30 V
kHz
V
DD
f
osc
T
A
= 25
C
Fig. 16: Typical internal chopper frequency
versus supply voltage
0
10
20
30
40
50
60
70
3
3.5
4.0
4.5
5.0
5.5
6.0 V
kHz
V
DD
f
osc
T
A
= 25
C
Fig. 17: Typical internal chopper frequency
versus supply voltage
0
10
20
30
40
50
60
70
50
0
50
100
150
200
kHz
T
A
f
osc
V
DD
= 12 V
C
Fig. 18: Typical internal chopper frequency
versus ambient temperature
50
0
50
100
150
200
A
T
A
I
OH
C
10
0
10
1
10
2
10
3
10
4
10
5
10
1
10
2
V
OH
= 24 V
V
DD
= 5 V
Fig. 19: Typical output leakage current
versus ambient temperature
HAL300
11
Micronas
20
22
24
26
28
30
A
V
OH
I
OH
V
10
0
10
1
10
2
10
3
10
4
10
5
10
1
10
2
V
DD
= 5 V
T
A
= 125
C
T
A
= 75
C
T
A
= 25
C
Fig. 20: Typical output leakage current
versus output voltage
Application Notes
Mechanical stress can change the sensitivity of the Hall
plates and an offset of the magnetic switching points
may result. External mechanical stress to the package
can influence the magnetic parameters if the sensor is
used under back-biased applications. This piezo sensi-
tivity of the sensor IC cannot be completely compen-
sated for by the switching offset compensation tech-
nique.
For back-biased applications, the HAL 320 is recom-
mended. In such cases, please contact our Application
Department. They will provide assistance in avoiding
applications which may induce stress to the ICs. This
stress may cause drifts of the magnetic parameters indi-
cated in this data sheet.
For electromagnetic immunity, it is recommended to ap-
ply a 4.7 nF capacitor between V
DD
(pin 1) and Ground
(pin 2). For automotive applications, a 220
W
series re-
sistor to pin 1 is recommended. Because of the I
DD
peak
at 4.1 V, the series resistor should not be greater than
270
. The series resistor and the capacitor should be
placed as close as possible to the IC.
Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T
J
) is higher
than the temperature outside the package (ambient tem-
perature T
A
).
T
J
= T
A
+
T
At static conditions, the following equations are valid:
for SOT-89A:
T = I
DD
* V
DD
* R
thJSB
for TO-92UA:
T = I
DD
* V
DD
* R
thJA
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for I
DD
and
R
th
, and the max. value for V
DD
from the application.
Test Circuits for Electromagnetic Compatibility
Test pulses V
EMC
corresponding to DIN 40839.
OUT
GND
3
2
1
V
DD
4.7 nF
V
EMC
V
P
R
V
220
R
L
1.2 k
20 pF
Fig. 21: Test circuit 2: test procedure for class A
OUT
GND
3
2
1
V
DD
4.7 nF
V
EMC
R
V
220
R
L
680
Fig. 22: Test circuit 1: test procedure for class C
HAL300
12
Micronas
Interferences conducted along supply lines in 12 V onboard systems
Product standard: DIN 40839 part 1
Pulse
Level
U
s
in V
Test
circuit
Pulses/
Time
Function
Class
Remarks
1
IV
100
1
5000
C
5 s pulse interval
2
IV
100
1
5000
C
0.5 s pulse interval
3a
IV
150
2
1 h
A
3b
IV
100
2
1h
A
4
IV
7
2
5
A
5
IV
86.5
1
10
C
10 s pulse interval
Electrical transient transmission by capacitive and inductive coupling via lines other than the supply lines
Product standard: DIN 40839 part 3
Pulse
Level
U
s
in V
Test
circuit
Pulses/
Time
Function
Class
Remarks
1
IV
30
2
500
A
5 s pulse interval
2
IV
30
2
500
A
0.5 s pulse interval
3a
IV
60
2
10 min
A
3b
IV
40
2
10 min
A
Radiated Disturbances
Product standard: DIN 40839 part 4
Test Conditions
Temperature:
Room temperature (22 ... 25
C)
Supply voltage:
13 V
Lab equipment:
TEM cell 220 MHz (VW standard)
with adaptor board 455 mm, device 80 mm over ground
Frequency range: 5 ... 220 MHz; 1 MHz steps
Test circuit 2 with R
L
= 1.2 k
Tested Devices and Results
Type
Field
strength
Modulation
Result
HAL 300
> 200 V/m
1 kHz 80 %
output voltage stable on the level high or low
1)
1)
low level
t
0.4 V, high level
u
90% of V
DD
HAL300
13
Micronas
HAL300
14
Micronas
HAL300
15
Micronas
HAL300
16
Micronas
Data Sheet History
1. Final data sheet: "HAL 300 Differential Hall Effect
Sensor IC", July 15, 1998, 6251-345-1DS. First release
of the final data sheet.
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@micronas.com
Internet: www.micronas.com
Printed in Germany
by Systemdruck+Verlags-GmbH, Freiburg (07/1998)
Order No. 6251-345-1DS
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirma-
tion form; the same applies to orders based on development samples
delivered. By this publication, Micronas GmbH does not assume re-
sponsibility for patent infringements or other rights of third parties
which may result from its use.
Further, Micronas GmbH reserves the right to revise this publication
and to make changes to its content, at any time, without obligation to
notify any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on
a retrieval system, or transmitted without the express written consent
of Micronas GmbH.
Micronas
page 1 of 1
Subject:
Data Sheet Concerned:
Supplement:
Edition:
Data Sheet Supplement
Changes:
position tolerance of the sensitive area reduced
tolerances of the outline dimensions reduced
thickness of the leadframe changed to 0.15 mm (old 0.125 mm)
HAL 300 now available in SOT-89B
SOT-89A will be discontinued in December 2000
Position of sensitive area
Note: A mechanical tolerance of
0.05 mm applies to all dimensions where no tolerance is explicitly given.
Position tolerances of the sensitive areas are defined in the package diagram.
HAL 300
HAL 320
x
1
+x
2
(2.05
0.001) mm
(2.25
0.001) mm
x
1
= x
2
1.025 mm nominal
1.125 mm nominal
y
0.95 mm nominal
0.95 mm nominal
sensitive area S
1
4.55
min.
0.25
x
1
x
2
2.55
0.4
0.4
1.7
0.4
1.5
3.0
0.06
0.04
4
0.2
0.15
branded side
SPGS0022-5-B3/1E
top view
y
1
2
3
2
0.3
1.15
0.2
sensitive area S
2
0.2
Improvement of SOT-89B Package
HAL 300, 6251-345-1DS, Edition July 15, 1998
HAL 320, 6251-439-1DS, Edition July 15, 1998
No. 1/ 6251-532-1DSS
July 4, 2000
HAL 300, HAL 320
PDF 
ZIP